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Arsenide

GALLIUM ARSENIDE

GALLIUM ARSENIDE 1. Exposure Data 1.1 Chemical and physical data 1.1.1 Nomenclature Chem. Abstr. Serv. Reg. No. : 1303-00-0 Deleted CAS Reg. No. : 12254-95-4, 106495-92-5, 116443-03-9, 385800-12-4 Chem. Abstr.

Metals Prices in the United States through 1998--Gallium

Research and development of gallium arsenide's semiconducting properties, which were begun in the mid-1960's, has continued through 1998 as potential applications for the material continue to be evaluated (Brodsky, 1990). Gallium- ...

MATERIAL SAFETY DATA SHEET

Effects of Exposure : To the best of our knowledge the chemical, physical and toxicological properties of gallium arsenide have not been thoroughly investigated and reported.

Gallium Arsenide

Gallium Arsenide Epitaxy Ready Polished Wafers Orientation Diameter Flat Option Flat orientation tolerance Major flat length Minor flat length Thickness/µm Lasermark 2" diameter slices (100)±0.1˚ 50.5±0.5 mm EJ ±0.1˚ 16±2 mm 8±1 mm 350±25µm or 500±25µm Back surface parallel to major ...

Gallium arsenide and indium arsenide surfaces produced ...

Journal of Crystal Growth 195 (1998) 28 — 33 Gallium arsenide and indium arsenide surfaces produced bymetalorganic vapor-phase epitaxy L. Li, B.-K. Han, D. Law, M. Begarney, R.F. Hicks * Department of Chemical Engineering, University of California, Los Angeles, CA 90095-1592, USA Abstract Thin ...

Characterization of Laser Ablation Spots on Silicon and ...

Characterization of Laser Ablation Spots on Silicon and Gallium Arsenide Surfaces by FIB, SEM and TEM M. Brodie and B. Foran The Aerospace Corporation, 2310 E. El Segundo Blvd., El Segundo, CA 90245-4691 An ablation laser used to mark the surface of a material can allow site-specific sample ...

Galliumarsenidedifferentiallyaffectsprocessing ...

arsenide-induced increase in serum corticosterone is not responsible for suppression of the IgM antibody response. J. Pharmacol. Exp. Ther. 268, 740–746. 8.

in the weight of the array substrate 2nd supporting structure.

COST TRADE BETWEEN MULTI-JUNCTION, GALLIUM ARSENIDE, AND SILICON SOLAR CELLS t$oddard,Space Right Center Gydnbelt, MD 20771,+-. Edard M. Gaddy Abstract Multi-junction (MJ),' gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%. 18.5% and 14.8%.

MATERIAL SAFETY DATA SHEET

MATERIAL SAFETY DATA SHEET PRODUCT NAME: GALLIUM ARSENIDE INGREDIENTS (Typical Values - Not Specifications): Gallium Arsenide 99.00% PRODUCT CLASSIFIED AS: NON-HAZARDOUS WARNING STATEMENT: None considered Necessary SECTION 1 - PHYSICAL/CHEMICAL CHARACTERISTICS BOILING POINT: N.A.(*) SOL.

Gallium Arsenide Products Designers Information PDF

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 http://www.triquint.com Contents Title Page GaAs Device Reliability and Reliability Test Results of TriQuint MMICs .....