Self-assembly of a sulphur-terminated graphene nanoribbon within a single-walled carbon nanotube
films (Insert is sub 50 nm of graphene nanoribbon), and (b) atomic force microscopy image after formation of metal electrodes and lift off process.
Chemical Doping of Graphene Nanoribbon Field-Effect Devices Yu-Ming Lin, 1 Damon B. Farmer, 1 George S. Tulevski, 1 Sheng Xu, 2 Roy G. Gordon 2 and Phaedon Avouris
RamanSpectrumofGrapheneandGrapheneLayers A.C. Ferrari, 1, * J.C. Meyer, 2 V. Scardaci, 1 C. Casiraghi, 1 M. Lazzeri, 3 F. Mauri, 3 S. Piscanec, 1 D. Jiang,
Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene Citation Campos, Leonardo C. et al. “Anisotropic Etching and Nanoribbon
region of the nanoribbon, which is O deficient relative to the “bulk” of the nanoribbon. Two main peaks at the O K-edge (Fig. 2a) and weak features (a-g, Fig. 2b)
Graphene Nanoribbon Phototransistor: Proposal and Analysis Victor Ryzhii 1; 4, Maxim Ryzhii 1; 4, Nadezhda Ryabova 1; 4, Vladimir Miti n 2, and Taiichi Otsuji 3; 4 1 Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan 2 Department of Electrical ...
(D) Epitaxial growth of a nanowireontop of a wide nanoribbon. HRTEM and SEAD images are obtained from the area indicated by the dashed circle. Edges of the nanoribbon and a platelet of thenanowireare highlighted with a red line to show the parallel arrangement.
GaN nanowire and Ga 2 O 3 nanowire and nanoribbon growth from ion implanted iron catalyst Jason L. Johnson, Yongho Choi, and Ant Ural a Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611
Organic Field-Effect Transistors By GillesHorowitz* Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular im-provementsduring the last two or three years.